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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. october 2009 doc id 16531 rev 1 1/15 15 std8n65m5, stf8n65m5, sti8n65m5 STP8N65M5, stu8n65m5 n-channel 650 v, 0.56 ? , 7 a mdmesh? v power mosfet in i 2 pak, to-220, to-220fp, dpak and ipak features worldwide best r ds(on) * area higher v dss rating high dv/dt capability excellent switching performance easy to drive 100% avalanche tested application switching applications description mdmesh? v is a revolutionary power mosfet technology based on an innovative proprietary vertical process, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on-resistance, which is unmatched among s ilicon-based power mosfets, making it es pecially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d std8n65m5 stf8n65m5 sti8n65m5 STP8N65M5 stu8n65m5 710 v 710 v 710 v 710 v 710 v < 0.6 ? < 0.6 ? < 0.6 ? < 0.6 ? < 0.6 ? 7 a 7 a (1) 7 a 7 a 7 a 1. limited only by maximum temperature allowed 1 2 3 1 2 3 to-220fp dpak to-220 ipak 1 2 3 i2pak 3 2 1 1 3 !-v $ ' 3 table 1. device summary order codes marking package packaging std8n65m5 stf8n65m5 sti8n65m5 STP8N65M5 stu8n65m5 8n65m5 8n65m5 8n65m5 8n65m5 8n65m5 dpak to-220fp i2pak to-220 ipak tape and reel tu b e tu b e tu b e tu b e www.st.com
contents std/f/i/p/u8n65m5 2/15 doc id 16531 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
std/f/i/p/u8n65m5 e lectrical ratings doc id 16531 rev 1 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, ipak dpak, i2pak to-220fp v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 7 7 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 4.4 4.4 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 28 28 (1) a p tot total dissipation at t c = 25 c 70 25 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) tbd a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) tbd mj dv/dt (3) 3. i sd 33 a, di/dt 400 a/s, v peak < v (br)dss peak diode recovery voltage slope tbd v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit dpak ipak to-220 i2pak to-220fp r thj-case thermal resistance junction- case max 1.79 5 c/w r thj-amb thermal resistance junction- ambient max 100 62.5 c/w r thj-pcb thermal resistance junction-pcb max 50 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics std/f/i/p/u8n65m5 4/15 doc id 16531 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 3.5 a 0.56 0.6 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - tbd tbd tbd - pf pf pf c o(er) (1) 1. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance energy related v gs = 0, v ds = 0 to 520 v - tbd - pf c o(tr) (2) 2. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss equivalent output capacitance time related v gs = 0, v ds = 0 to 520 v - tbd - pf r g intrinsic gate resistance f = 1 mhz open drain - tbd - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 3.5 a, v gs = 10 v (see figure 3 ) - 190 tbd tbd - nc nc nc
std/f/i/p/u8n65m5 electrical characteristics doc id 16531 rev 1 5/15 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(off) t r t c t f turn-off delay time rise time cross time fall time v dd = 400 v, i d = 4a, r g = 4.7 ?, v gs = 10 v (see figure 4 ) (see figure 7 ) - tbd tbd tbd tbd - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 7 28 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100 a/s v dd = 100 v (see figure 4 ) - tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 4 ) - tbd tbd tbd ns c a
test circuits std/f/i/p/u8n65m5 6/15 doc id 16531 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - ))
std/f/i/p/u8n65m5 package mechanical data doc id 16531 rev 1 7/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data std/f/i/p/u8n65m5 8/15 doc id 16531 rev 1 table 8. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 figure 8. to-220fp drawing mechanical data 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
std/f/i/p/u8n65m5 package mechanical data doc id 16531 rev 1 9/15 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
package mechanical data std/f/i/p/u8n65m5 10/15 doc id 16531 rev 1 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h
std/f/i/p/u8n65m5 package mechanical data doc id 16531 rev 1 11/15 i2pak (to-262) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 2.40 2.72 0.094 0.107 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.2 3 1. 3 20.04 8 0.052 d 8 .95 9. 3 50. 3 52 0. 3 6 8 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0. 3 9 3 0.410 l1 3 14 0.511 0.551 l1 3 .50 3 .9 3 0.1 3 7 0.154 l2 1.27 1.40 0.050 0.055
package mechanical data std/f/i/p/u8n65m5 12/15 doc id 16531 rev 1 dim. mm. . x a m p y t . n i m 0 4 . 2 0 2 . 2 a 0 1 . 1 0 9 . 0 1 a 3 2 . 0 3 0 . 0 2 a 0 9 . 0 4 6 . 0 b 0 4 . 5 0 2 . 5 4 b 0 6 . 0 5 4 . 0 c 0 6 . 0 8 4 . 0 2 c 0 2 . 6 0 0 . 6 d 0 1 . 5 1 d 0 6 . 6 0 4 . 6 e 0 7 . 4 1 e 8 2 . 2 e 0 6 . 4 0 4 . 4 1 e 0 1 . 0 1 5 3 . 9 h 1 l 0 8 . 2 1 l 0 8 . 0 2 l 1 0 6 . 0 4 l 0 2 . 0 r v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
std/f/i/p/u8n65m5 packaging mechanical data doc id 16531 rev 1 13/15 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history std/f/i/p/u8n65m5 14/15 doc id 16531 rev 1 6 revision history table 9. document revision history date revision changes 23-oct-2009 1 first release
std/f/i/p/u8n65m5 doc id 16531 rev 1 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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